M66256FP |
RFQ for M66256FP Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| M66256FP | - | SSOP24 | - |
The M66256FP is a high-speed line memory with a FIFO(First In First Out) structure of 5120-word ×8-bit configuration
which uses high-performance silicon gate CMOS process technology.
It has separate clock, enable and reset signals for write and read, and is most suitable as a buffer memory between devices with different data processing throughput.
Typical Application |
Features |
| Digital photocopiers, high-speed facsimile, laser beam printers | • Memory configuration ..................................................................................... 5120 words× 8-bits (dynamic memory)• High-speed cycle ............................................. 25ns (Min.)• High-speed access ......................................... 18ns (Max.)• Output hold ........................................................ 3ns (Min.)• Fully independent, asynchronous write and read operations• Variable length delay bit• Output .................................................................... 3 states |
|
Symbol |
Parameter |
Conditions |
Rating |
Unit |
| Vcc | Supply voltage |
A value based on GND pin |
-0.5to+7.0 |
V |
| VI | Input voltage |
0.5 toVcc+0.5 |
V | |
| Vo | Output voltage |
0.5 toVcc+0.5 |
V | |
| Pd | Maximum power dissipation | Ta = 25°C |
440 |
mW |
| Tstg | Storage temperature |
-65 to +150 |
°C |
